2002. 1. 24
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SEMICONDUCTOR
TECHNICAL DATA
KRX105E
Revision No : 1
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in TESV.
(Thin Extreme Super mini type with 5 pin.)
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM MILLIMETERS
A
A1
B1
C
TESV
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
B
D
H
J
B1
B
D
A
A1
C
C
J
H
1
2
3
5
4
P
P
P
5
+
_
+
_
+
_
+
_
+
_
+
_
+
_
1. Q COMMON (EMITTER)
2. Q IN (BASE)
3. Q COMMON (EMITTER)
4. Q OUT (COLLECTOR)
5. Q OUT (COLLECTOR)
1
1
Q IN (BASE)
2
1
2
2
EQUIVALENT CIRCUIT
Q1 MAXIMUM RATING (Ta=25 )
R1
C
E
B
R1
C
E
B
Q
1
R1=4.7K
(Q , Q COMMON)
Q
2
2
1
1
Q1
2
3
5
4
Q2
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Raing.
BE
Type Name
1
2
3
4
5
Q2 MAXIMUM RATING (Ta=25 )
Q1, Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
100
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-100
CHARACTERISTIC
SYMBOL
RATING
UNIT
Power Dissipation
P
C
*
200
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Marking
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
2002. 1. 24
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KRX105E
Revision No : 1
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : * Characteristic of Transistor Only.
Note : * Characteristic of Transistor Only.
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
-
-
100
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
100
DC Current Gain
h
FE
V
CE
=5V, I
C
=1
120
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=10 , I
B
=0.5
-
0.1
0.3
V
Transition Frequency
f
T
*
V
CE
=10V, I
C
=5
-
250
-
Input Resistor
R
1
-
4.7
-
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
I
CBO
V
CB
=-50V, I
E
=0
-
-
-100
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-100
DC Current Gain
h
FE
V
CE
=-5V, I
C
=-1
120
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-10 , I
B
=-0.5
-
-0.1
-0.3
V
Transition Frequency
f
T
*
V
CE
=-10V, I
C
=-5
-
250
-
Input Resistor
R
1
-
4.7
-
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